EFFECT OF REACTION TEMPERATURE ON Cu(InGa)(SeS)2 FORMATION BY A SEQUENTIAL H2Se/H2S PRECURSOR REACTION PROCESS
نویسندگان
چکیده
The effect of sulfization temperature on Ga throughfilm uniformity in a 2-reaction H2Se/H2S precursor process for Cu(InGa)(SeS)2 was studied. Cu0.8Ga0.2/In bi-layer precursors were prepared by sputter deposition. The precursors were then partially selenized at 450 oC, followed by sulfization at temperatures ranging from 450 to 550 oC. The observed threshold temperature for Ga homogenization during sulfization was ∼500 oC. It is speculated that this threshold temperature possibly derives from a solid→liquid phase transition at 485 oC on the Ga-rich edge of the γ1-Cu9Ga4 phase region.
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